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1 × ر.ع.49.52
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2 × ر.ع.19.05
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1 × ر.ع.71.43
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1 × ر.ع.857.14
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1 × ر.ع.50.48
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1 × ر.ع.22.86
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1 × ر.ع.79.05
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1 × ر.ع.39.05
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1 × ر.ع.23.81
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1 × ر.ع.55.24
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3 × ر.ع.39.05
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1 × ر.ع.13.33
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1 × ر.ع.25.71
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1 × ر.ع.7.62
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1 × ر.ع.54.29
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Kingston DRAM 16GB 2666MHz DDR4 Non-ECC CL19 SODIMM 2Rx8
ر.ع.34.29
DRAM 16GB 2666MHz DDR4 Non-ECC CL19 SODIMM 2Rx
This document describes ValueRAM’s KVR26S19S6/8 as a 1G
x 64-bit (16GB) DDR4-2666 CL19 SDRAM (Synchronous
DRAM), 1Rx16, memory module, based on four 1G x 16-bit
FBGA components. The SPD is programmed to JEDEC
standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This
260-pin SODIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 8 internal banks; 2 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.18” (30.00mm)
• RoHS Compliant and Halogen-Free
CL(IDD) 19 cycles
Row Cycle Time (tRCmin) 45.75ns(min.)
Refresh to Active/Refresh 350ns(min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 32ns(min.)
UL Rating 94 V – 0
Operating Temperature 0o
C to +85o
C
Storage Temperature -55o
C to +100o
C
Additional information
Weight | 0.2 kg |
---|
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